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to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
notice 1. all information included in this document is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas el ectronics products li sted herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by rene sas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringeme nt of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electroni cs products or techni cal information descri bed in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyri ghts or other intell ectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any re nesas electronics product, wh ether in whole or in part . 4. descriptions of circuits, software and other related informat ion in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully re sponsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this doc ument, you should comply with the applicable export control laws and regulations and follow the proc edures required by such laws and re gulations. you should not use renesas electronics products or the technology described in this docum ent for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated into any products or systems whose manufacture, us e, or sale is prohibited under any applicable dom estic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing th e information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. renesas electronics products ar e classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product de pends on the product?s quality grade, as indicated below. you must check the qua lity grade of each renesas electronics pr oduct before using it in a particular application. you may not use any renesas electronics produc t for any application categorized as ?speci fic? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. re nesas electronics shall not be in any way liable for any damages or losses incurred by you or third partie s arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intende d where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electr onics data sheets or data books, etc. ?standard?: computers; office equipmen t; communications e quipment; test and measurement equipment; audio and visual equipment; home electronic a ppliances; machine tools; personal electronic equipmen t; and industrial robots. ?high quality?: transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specif ically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support device s or systems), surgical im plantations, or healthcare intervention (e.g. excision, etc.), and any other applicati ons or purposes that pose a di rect threat to human life. 8. you should use the renesas electronics pr oducts described in this document within the range specified by renesas electronics , especially with respect to the maximum ra ting, operating supply voltage range, movement power volta ge range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its produc ts, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate a nd malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physic al injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safe ty design for hardware and software in cluding but not limited to redundancy, fire control and malfunction prevention, appropri ate treatment for aging degradation or an y other appropriate measures. because the evaluation of microcomputer software alone is very difficult , please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesa s electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regul ate the inclusion or use of c ontrolled substances, including wi thout limitation, the eu rohs directive. renesas electronics assumes no liability for damage s or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in w hole or in part, without prio r written consent of renes as electronics. 12. please contact a renesa s electronics sales office if you have any questi ons regarding the informat ion contained in this document or renesas electroni cs products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor np40n055ehe, np40n055khe np40n055che, np40n055dhe, np40n055mhe, np40n055nhe switching n-channel power mos fet data sheet 2002, 2007 document no. d14092ej6v0ds00 (6th edition) date published october 2007 ns printed in japan the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. description these products are n-channel mos field effect transi stors designed for high curr ent switching applications. ordering information part number lead plating packing package np40n055ehe-e1-ay note1, 2 np40n055ehe-e2-ay note1, 2 to-263 (mp-25zj) typ. 1.4 g np40n055khe-e1-ay note1 np40n055khe-e2-ay note1 pure sn (tin) tape 800 p/reel to-263 (mp-25zk) typ. 1.5 g np40n055che-s12-az note1, 2 sn-ag-cu to-220 (mp-25) typ. 1.9 g np40n055dhe-s12-ay note1, 2 to-262 (mp-25 fin cut) typ. 1.8 g np40n055mhe-s18-ay note1 to-220 (mp-25k) typ. 1.9 g np40n055nhe-s18-ay note1 pure sn (tin) tube 50 p/tube to-262 (mp-25sk) typ. 1.8 g notes 1. pb-free (this product does not cont ain pb in the external electrode.) 2. not for new design features ? channel temperature 175 degree rated ? super low on-state resistance r ds(on) = 23 m max. (v gs = 10 v, i d = 20 a) ? low input capacitance c iss = 1070 pf typ. ? built-in gate protection diode (to-220) (to-262) (to-263)
data sheet d14092ej6v0ds 2 np40n055ehe, np40n055khe, np40n055che, np40n055dhe, np40n055mhe, np40n055nh e absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss 55 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 40 a drain current (pulse) note1 i d(pulse) 100 a total power dissipation (t a = 25 c) p t 1.8 w total power dissipation (t c = 25 c) p t 66 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c single avalanche current note2 i as 29/21/7 a single avalanche energy note2 e as 0.8/44/49 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25 c, v dd = 28 v, r g = 25 , v gs = 20 0 v (see figure 4. ) thermal resistance channel to case thermal resistance r th(ch-c) 2.27 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w
data sheet d14092ej6v0ds 3 np40n055ehe, np40n055khe, np40n055che, np40n055dhe, np40n055mhe, np40n055nh e electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain to source on-state resistance r ds(on) v gs = 10 v, i d = 20 a 18 23 m gate to source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 3.0 4.0 v forward transfer admittance | y fs | v ds = 10 v, i d = 20 a 7 14 s drain leakage current i dss v ds = 55 v, v gs = 0 v 10 a gate to source leakage current i gss v gs = 20 v, v ds = 0 v 10 a input capacitance c iss 1070 1610 pf output capacitance c oss 190 280 pf reverse transfer capacitance c rss v ds = 25 v, v gs = 0 v, f = 1 mhz 95 180 pf turn-on delay time t d(on) 16 35 ns rise time t r 9.2 23 ns turn-off delay time t d(off) 29 57 ns fall time t f i d = 20 a, v gs = 10 v, v dd = 28 v, r g = 1 9.2 23 ns total gate charge q g 23 35 nc gate to source charge q gs 6 nc gate to drain charge q gd i d = 40 a, v dd = 44 v, v gs = 10 v 9 nc body diode forward voltage v f(s-d) i f = 40 a, v gs = 0 v 1.0 v reverse recovery time t rr 38 ns reverse recovery charge q rr i f = 40 a, v gs = 0 v, di/dt = 100 a/ s 46 nc test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1 % v gs wave form v ds wave form v gs v ds 10 % 0 0 90 % 90 % 90 % v gs v ds t on t off t d(on) t r t d(off) t f 10 %10 %
data sheet d14092ej6v0ds 4 np40n055ehe, np40n055khe, np40n055che, np40n055dhe, np40n055mhe, np40n055nh e typical characteristics (t a = 25 c) figure2. total power dissipation vs. case temperature t c - case temperature - c p t - total power dissipation - w 0 0 25 50 75 100 125 150 175 200 70 60 50 40 30 20 10 figure.3 forward bias safe operating area figure1. derating factor of forward bias safe operating area dt - percentage of rated power - % 0 0 25 50 75 100 125 150 175 200 20 40 60 80 100 figure4. single avalanche energy derating factor starting t ch - starting channel temperature - c single pulse avalanche energy - mj 0 25 30 40 50 60 50 75 100 125 150 175 10 20 t c - case temperature - c i as = 7 a 0.8 mj 49 mj 44 mj 29 a 21 a figure5. transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - c /w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse r th(ch-a) = 83.3 c/w 10 100 r th(ch-c) = 2.27 c/w v ds - drain to source voltage - v i d - drain current - a 1 0.1 10 100 1000 1 10 100 t c = 25 c single pulse 0.1 i d(pulse) pw = 10 s 100 s 1 ms dc r ds(on) limited (v gs = 10 v) i d(dc) power dissipation limited
data sheet d14092ej6v0ds 5 np40n055ehe, np40n055khe, np40n055che, np40n055dhe, np40n055mhe, np40n055nh e figure8. forward transfer admittance vs. drain current figure9. drain to source on-state resistance vs. gate to source voltage figure10. drain to source on-state resistance vs. drain current figure11. gate to source threshold voltage vs. channel temperature t ch - channel temperature - c v gs(th) - gate to source threshold voltage - v i d - drain current - a | y fs | - forward transfer admittance - s v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m 0 0 4 2681012 10 1 100 14 16 18 0.1 10 20 30 40 50 i d - drain current - a r ds(on) - drain to source on-state resistance - m 10 1 0.1 50 20 30 40 10 100 pulsed 0 v gs = 10 v 0.01 0.01 0.1 1 10 100 pulsed pulsed v ds = 10 v 75 c 25 c ? 55 c i d = 20 a 1.0 v ds = v gs i d = 250 a 2.0 3.0 4.0 ? 50 0 50 100 150 0 figure7. drain current vs. drain to source voltage figure6. forward transfer characteristics v ds - drain to source voltage - v i d - drain current - a v gs - gate to source voltage - v i d - drain current - a 1 0.1 0 0 2 3 5 4 40 10 100 1000 pulsed 100 120 80 60 1 pulsed 2 v gs =10 v 34 6 7 5 v ds = 10 v 20 t a = ? 55 c 25 c 75 c 150 c 175 c t a = 175 c
data sheet d14092ej6v0ds 6 np40n055ehe, np40n055khe, np40n055che, np40n055dhe, np40n055mhe, np40n055nh e figure12. drain to source on-state resistance vs. channel temperature t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m figure13. source to drain diode forward voltage figure14. capacitance vs. drain to source voltage figure15. switching characteristics 0 10 ? 50 20 30 40 0 50 100 150 figure16. reverse recovery time vs. diode forward current 50 figure17. dynamic input/output characteristics v gs = 10 v 1.0 i f - diode forward current - a 0 1.5 v f(s-d) - source to drain voltage - v 0.5 pulsed 0.1 1 10 100 1000 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1 0.1 0.1 100 10 1000 10000 1 10 100 v gs = 0 v f = 1 mhz 1 10 1000 100 10 100 v gs - gate to source voltage - v i f - diode forward current - a t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0 v 1 0.1 10 1 10 100 q g - gate charge - nc v ds - drain to source voltage - v 0 0 40 20 10 30 20 40 60 80 2 4 v ds 1000 100 6 10 12 14 16 8 v gs pulsed v gs = 10 v 0 v c oss c rss c iss t d(on) t d(off) t f t r v dd = 44 v i d = 40 a 28 v 11 v i d = 20 a v dd = 28 v v gs = 10 v r g = 1
data sheet d14092ej6v0ds 7 np40n055ehe, np40n055khe, np40n055che, np40n055dhe, np40n055mhe, np40n055nh e package drawings (unit: mm) 1)to-263 (mp-25zj) note 2)to-263 (mp-25zk) 1.4 0.2 1.0 0.5 2.54 typ. 2.54 typ. 8.5 0.2 123 5.7 0.4 4 4.8 max. 1.3 0.2 0.5 0.2 1.gate 2.drain 3.source 4.fin (drain) 0.7 0.2 10 typ. 0.5r typ. 0.8r typ. 2.8 0.2 10.0 0.3 8.0 typ. 2.54 0.75 0.2 9.15 0.3 2.54 0.25 15.25 0.5 1.35 0.3 123 4 2.5 4.45 0.2 1.3 0.2 0.5 0.2 0 to 8 1.gate 2.drain 3.source 4.fin (drain) no plating 7.88 min. 0.025 to 0.25 0.25 3)to-220 (mp-25) note 4)to-262 (mp-25 fin cut) note 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 typ. 3.6 0.2 4 3.0 0.3 1.3 0.2 0.75 0.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.3 0.2 0.5 0.2 2.8 0.2 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10 typ. 1.3 0.2 0.75 0.3 2.54 typ. 2.54 typ. 8.5 0.2 12.7 min. 1.3 0.2 0.5 0.2 2.8 0.2 1.0 0.5 4 note not for new design
data sheet d14092ej6v0ds 8 np40n055ehe, np40n055khe, np40n055che, np40n055dhe, np40n055mhe, np40n055nh e 5)to-220 (mp-25k) 6)to-262 (mp-25sk) 4 2.8 0.3 10.0 0.2 3.8 0.2 6.3 0.3 4.45 0.2 1.3 0.2 0.8 0.1 0.5 0.2 2.5 0.2 1.27 0.2 3.1 0.2 15.9 max. 123 13.7 0.3 2.54 typ. 2.54 typ. 1.gate 2.drain 3.source 4.fin (drain) 4 123 10.0 0.2 4.45 0.2 1.3 0.2 13.7 0.3 0.8 0.1 1.27 0.2 0.5 0.2 2.5 0.2 2.54 typ. 2.54 typ. 1.2 0.3 8.9 0.2 10.1 0.3 3.1 0.3 1.gate 2.drain 3.source 4.fin (drain) equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of t he transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
data sheet d14092ej6v0ds 9 np40n055ehe, np40n055khe, np40n055che, np40n055dhe, np40n055mhe, np40n055nh e tape information there are two types (-e1, -e2) of taping depending on the direction of the device. reel side draw-out side marking information 40n055 lot code nec he pb-free plating marking abbreviation of part number recommended soldering conditions these products should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than th ose recommended below, please contact an nec electronics sales representative. for technical information, see the following website. semiconductor device mount manual (http:// www.necel.com/pkg/en/mount/index.html) soldering method soldering conditions recommended condition symbol infrared reflow mp-25zj, mp-25zk maximum temperature (package's surface temperature): 260 c or below time at maximum temperature: 10 seconds or less time of temperature higher than 220 c: 60 seconds or less preheating time at 160 to 180 c: 60 to 120 seconds maximum number of reflow processes: 3 times maximum chlorine content of rosin flux (percentage mass): 0.2% or less ir60-00-3 wave soldering mp-25, mp-25k, mp-25sk, mp-25 fin cut maximum temperature (solder temperature): 260 c or below time: 10 seconds or less maximum chlorine content of rosin flux: 0.2% (wt.) or less thdws partial heating mp-25zj, mp-25zk, mp-25k, mp-25sk maximum temperature (pin temperature): 350 c or below time (per side of the device): 3 seconds or less maximum chlorine content of rosin flux: 0.2% (wt.) or less p350 partial heating mp-25, mp-25 fin cut maximum temperature (pin temperature): 300 c or below time (per side of the device): 3 seconds or less maximum chlorine content of rosin flux: 0.2% (wt.) or less p300 caution do not use different soldering methods together (except for partial heating).
np40n055ehe, np40n055khe, np40n055che, np40n055dhe, np40n055mhe, np40n055nh e the information in this document is current as of october, 2007. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific":

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